Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | ZXMHC3A01 [1] |
| Configuration | 2 N and 2 P-Channel (Full Bridge) [1] |
| Current - Continuous Drain (Id) @ 25°C | 2.17A, 1.64A [1] |
| FET Feature | Logic Level Gate [1] |
| Drain to Source Voltage (Vdss) | 30V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 25V, 204pF @ 15V [1] |
| Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 10V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 870mW [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.5A, 10V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs(th) (Max) @ Id | 3V @ 250µA [1] |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) [1] |
Specification references[1]Diodes Incorporated ZXMHC3A01N8TC vendor product record ↗