ZXMHC10A07N8TC representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Diodes Incorporated · exact orderable part

ZXMHC10A07N8TC

MOSFET 2N/2P-CH 100V 8-SOIC

FET Type
2 N and 2 P-Channel (Half Bridge)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
800mA, 680mA
Rds On (Max) @ Id, Vgs
700mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.9nC @ 10V
Power - Max
870mW
Input Capacitance (Ciss) (Max) @ Vds
138pF @ 60V
FET Feature
Standard
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case8-SOIC (0.154", 3.90mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

ZXMHC10A07N8TC technical parameters
ParameterValue
Base Product NumberZXMHC10A07 [1]
Current - Continuous Drain (Id) @ 25°C800mA, 680mA [1]
Drain to Source Voltage (Vdss)100V [1]
FET FeatureStandard [1]
FET Type2 N and 2 P-Channel (Half Bridge) [1]
Gate Charge (Qg) (Max) @ Vgs2.9nC @ 10V [1]
Input Capacitance (Ciss) (Max) @ Vds138pF @ 60V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max870mW [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs700mOhm @ 1.5A, 10V [1]
Vgs(th) (Max) @ Id4V @ 250µA [1]
Package / Case8-SOIC (0.154", 3.90mm Width) [1]

Catalog relationships

Keep family and exact MPN intent separate.

This page describes one orderable part. A family page helps select suffixes but never carries assumed stock or a price.

Related exact parts

Other published parts

Browse exact MPNs and compare their specifications. These links do not imply compatibility or interchangeability.

ZXMHC10A07N8TC Diodes Incorporated Datasheet, Specs and RFQ | MPNHarbor