ZXMD65P03N8TA representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

Diodes Incorporated · exact orderable part

ZXMD65P03N8TA

MOSFET 2P-CH 30V 3.8A 8-SOIC

Configuration
2 P-Channel (Dual)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
3.8A
Rds On (Max) @ Id, Vgs
55mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25.7nC @ 10V
Power - Max
1.25W
Input Capacitance (Ciss) (Max) @ Vds
930pF @ 25V
Technology
MOSFET (Metal Oxide)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case8-SOIC (0.154", 3.90mm Width)
Mounting typeSurface Mount
PackingCut Tape (CT)

Technical parameters

Technical specifications

ZXMD65P03N8TA technical parameters
ParameterValue
Base Product NumberZXMD65P03 [1]
Configuration2 P-Channel (Dual) [1]
Current - Continuous Drain (Id) @ 25°C3.8A [1]
Drain to Source Voltage (Vdss)30V [1]
Input Capacitance (Ciss) (Max) @ Vds930pF @ 25V [1]
Gate Charge (Qg) (Max) @ Vgs25.7nC @ 10V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Power - Max1.25W [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs55mOhm @ 4.9A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id1V @ 250µA [1]
Package / Case8-SOIC (0.154", 3.90mm Width) [1]

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