ZXMD63P03XTA representative package visual — not an exact-product photograph
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Exact MPN13 sourced attributes1 source document

Diodes Incorporated · exact orderable part

ZXMD63P03XTA

MOSFET 2P-CH 30V 8-MSOP

FET Type
2 P-Channel (Dual)
Drain to Source Voltage (Vdss)
30V
Rds On (Max) @ Id, Vgs
185mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
7nC @ 10V
Power - Max
1.04W
Input Capacitance (Ciss) (Max) @ Vds
270pF @ 25V
FET Feature
Logic Level Gate
Operating Temperature
-55°C~150°C(TJ)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

ZXMD63P03XTA technical parameters
ParameterValue
Drain to Source Voltage (Vdss)30V [1]
FET FeatureLogic Level Gate [1]
FET Type2 P-Channel (Dual) [1]
Gate Charge (Qg) (Max) @ Vgs7nC @ 10V [1]
Input Capacitance (Ciss) (Max) @ Vds270pF @ 25V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max1.04W [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs185mOhm @ 1.2A, 10V [1]
Vgs(th) (Max) @ Id1V @ 250µA (Min) [1]
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width) [1]

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