ZXMC4559DN8TC representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Diodes Incorporated · exact orderable part

ZXMC4559DN8TC

MOSFET N/P-CH 60V 3.6A/2.6A 8SO

FET Type
N and P-Channel
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
3.6A, 2.6A
Rds On (Max) @ Id, Vgs
55mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
20.4nC @ 10V
Power - Max
2.1W
Input Capacitance (Ciss) (Max) @ Vds
1063pF @ 30V
FET Feature
Logic Level Gate
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case8-SOIC (0.154", 3.90mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

ZXMC4559DN8TC technical parameters
ParameterValue
Base Product NumberZXMC4559 [1]
Current - Continuous Drain (Id) @ 25°C3.6A, 2.6A [1]
Drain to Source Voltage (Vdss)60V [1]
FET FeatureLogic Level Gate [1]
FET TypeN and P-Channel [1]
Gate Charge (Qg) (Max) @ Vgs20.4nC @ 10V [1]
Input Capacitance (Ciss) (Max) @ Vds1063pF @ 30V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max2.1W [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs55mOhm @ 4.5A, 10V [1]
Vgs(th) (Max) @ Id1V @ 250µA (Min) [1]
Package / Case8-SOIC (0.154", 3.90mm Width) [1]

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