ZXMC3AMCTA representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Diodes Incorporated · exact orderable part

ZXMC3AMCTA

MOSFET N/P-CH 30V 2.9A/2.1A 8DFN

FET Type
N and P-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
2.9A, 2.1A
Rds On (Max) @ Id, Vgs
120mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.9nC @ 10V
Power - Max
1.7W
Input Capacitance (Ciss) (Max) @ Vds
190pF @ 25V
FET Feature
Logic Level Gate
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case8-WDFN Exposed Pad
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

ZXMC3AMCTA technical parameters
ParameterValue
Base Product NumberZXMC3 [1]
Current - Continuous Drain (Id) @ 25°C2.9A, 2.1A [1]
Drain to Source Voltage (Vdss)30V [1]
FET FeatureLogic Level Gate [1]
FET TypeN and P-Channel [1]
Gate Charge (Qg) (Max) @ Vgs3.9nC @ 10V [1]
Input Capacitance (Ciss) (Max) @ Vds190pF @ 25V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max1.7W [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs120mOhm @ 2.5A, 10V [1]
Vgs(th) (Max) @ Id3V @ 250µA [1]
Package / Case8-WDFN Exposed Pad [1]

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