Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 4.5 A [1] |
| Current - Collector Cutoff (Max) | 50nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 500mA, 1V [1] |
| Frequency - Transition | 80MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C~200°C(TJ) [1] |
| Power - Max | 1.58 W [1] |
| Product Status | Active [1] |
| Transistor Type | PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 5A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 12 V [1] |
| Package / Case | E-Line-3 [1] |
Specification references[1]Diodes Incorporated ZTX968 vendor product record ↗
