Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 3 A [1] |
| Base Product Number | ZTX857 [1] |
| Current - Collector Cutoff (Max) | 1µA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 10V [1] |
| Frequency - Transition | 80MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C~200°C(TJ) [1] |
| Power - Max | 1.2 W [1] |
| Product Status | Active [1] |
| Transistor Type | NPN [1] |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 600mA, 3A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 300 V [1] |
| Package / Case | E-Line-3, Formed Leads [1] |
Specification references[1]Diodes Incorporated ZTX857STZ vendor product record ↗
