TPH3212PS representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN16 sourced attributes1 source document

Transphorm · exact orderable part

TPH3212PS

GANFET N-CH 650V 27A TO220AB

Base Product Number
TPH3212
Current - Continuous Drain (Id) @ 25°C
27A (Tc)
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 8 V
Original manufacturerCommercial terms confirmed per lot
ManufacturerTransphorm
Package / caseTO-220-3
Mounting typeunknown
PackingTube

Technical parameters

Technical specifications

TPH3212PS technical parameters
ParameterValue
Base Product NumberTPH3212 [1]
Current - Continuous Drain (Id) @ 25°C27A (Tc) [1]
Drain to Source Voltage (Vdss)650 V [1]
Drive Voltage (Max Rds On, Min Rds On)10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs14 nC @ 8 V [1]
Input Capacitance (Ciss) (Max) @ Vds1130 pF @ 400 V [1]
MfrTransphorm [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)104W (Tc) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs72mOhm @ 17A, 8V [1]
TechnologyGaNFET (Cascode Gallium Nitride FET) [1]
Vgs (Max)±18V [1]
Vgs(th) (Max) @ Id2.6V @ 400uA [1]

Catalog relationships

Keep family and exact MPN intent separate.

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