TPH3206PD representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN18 sourced attributes2 source documents

Transphorm · exact orderable part

TPH3206PD

GANFET N-CH 600V 17A TO220AB

FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
17A (Tc)
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 8V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±18V
Vgs(th) (Max) @ Id
2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 4.5 V
Power Dissipation (Max)
96W (Tc)
Original manufacturerCommercial terms confirmed per lot
ManufacturerTransphorm
Package / caseTO-220-3
Mounting typeThrough Hole
PackingTube

Technical parameters

Technical specifications

TPH3206PD technical parameters
ParameterValue
Base Product NumberTPH3206 [2]
Current - Continuous Drain (Id) @ 25°C17A (Tc) [2]
Drain to Source Voltage (Vdss)600 V [2]
Drive Voltage (Max Rds On, Min Rds On)10V [2]
FET TypeN-Channel [2]
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 4.5 V [2]
Input Capacitance (Ciss) (Max) @ Vds760 pF @ 480 V [2]
MfrTransphorm [2]
Mounting TypeThrough Hole [2]
RoHS (DigiKey record)RoHS Compliant [2]
Operating Temperature-55°C~175°C(TJ) [2]
Power Dissipation (Max)96W (Tc) [2]
Product StatusNot For New Designs [2]
Rds On (Max) @ Id, Vgs180mOhm @ 11A, 8V [2]
TechnologyGaNFET (Gallium Nitride) [2]
Vgs (Max)±18V [2]
Vgs(th) (Max) @ Id2.6V @ 500µA [2]
Package / CaseTO-220-3 [2]

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