Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) [1] |
| Drain to Source Voltage (Vdss) | 600 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V [1] |
| FET Type | N-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 4.5 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 480 V [1] |
| Mfr | Transphorm [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~175°C(TJ) [1] |
| Power Dissipation (Max) | 65W (Tc) [1] |
| Product Status | Obsolete [1] |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 5.5A, 8V [1] |
| Technology | GaNFET (Gallium Nitride) [1] |
| Vgs (Max) | ±18V [1] |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA [1] |
| Package / Case | 3-PowerDFN [1] |
Specification references[1]Transphorm TPH3202LS vendor product record ↗