TP90H180PS representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN18 sourced attributes2 source documents

Transphorm · exact orderable part

TP90H180PS

GANFET N-CH 900V 15A TO220AB

FET Type
N-Channel
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Rds On (Max) @ Id, Vgs
205mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±18V
Vgs(th) (Max) @ Id
2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 8 V
Power Dissipation (Max)
78W (Tc)
Original manufacturerCommercial terms confirmed per lot
ManufacturerTransphorm
Package / caseTO-220-3
Mounting typeThrough Hole
PackingTube

Technical parameters

Technical specifications

TP90H180PS technical parameters
ParameterValue
Base Product NumberTP90H180 [2]
Current - Continuous Drain (Id) @ 25°C15A (Tc) [2]
Drain to Source Voltage (Vdss)900 V [2]
Drive Voltage (Max Rds On, Min Rds On)10V [2]
FET TypeN-Channel [2]
Gate Charge (Qg) (Max) @ Vgs10 nC @ 8 V [2]
Input Capacitance (Ciss) (Max) @ Vds780 pF @ 600 V [2]
MfrTransphorm [2]
Mounting TypeThrough Hole [2]
RoHS (DigiKey record)RoHS Compliant [2]
Operating Temperature-55°C~150°C(TJ) [2]
Power Dissipation (Max)78W (Tc) [2]
Product StatusObsolete [2]
Rds On (Max) @ Id, Vgs205mOhm @ 10A, 10V [2]
TechnologyGaNFET (Cascode Gallium Nitride FET) [2]
Vgs (Max)±18V [2]
Vgs(th) (Max) @ Id2.6V @ 500µA [2]
Package / CaseTO-220-3 [2]

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