Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | TP65H480 [1] |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) [1] |
| Drain to Source Voltage (Vdss) | 650 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 8V [1] |
| FET Type | N-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 8 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V [1] |
| Mfr | Transphorm [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power Dissipation (Max) | 13.2W (Tc) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 560mOhm @ 3.4A, 8V [1] |
| Technology | GaNFET (Cascode Gallium Nitride FET) [1] |
| Vgs (Max) | ±18V [1] |
| Vgs(th) (Max) @ Id | 2.8V @ 500µA [1] |
| Package / Case | 3-SMD, Flat Lead [1] |
Specification references[1]Transphorm TP65H480G4JSG-TR vendor product record ↗