Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | TP65H300 [1] |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) [1] |
| Drain to Source Voltage (Vdss) | 650 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 8V [1] |
| FET Type | N-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 9.6 nC @ 8 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V [1] |
| Mfr | Transphorm [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power Dissipation (Max) | 21W (Tc) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 312mOhm @ 5A, 8V [1] |
| Technology | GaNFET (Gallium Nitride) [1] |
| Vgs (Max) | ±18V [1] |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA [1] |
Specification references[1]Transphorm TP65H300G4LSG-TR vendor product record ↗