Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | TP65H050 [1] |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) [1] |
| Drain to Source Voltage (Vdss) | 650 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V [1] |
| FET Type | N-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V [1] |
| Mfr | Transphorm [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power Dissipation (Max) | 119W (Tc) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V [1] |
| Series | SuperGaN® [1] |
| Technology | GaNFET (Gallium Nitride) [1] |
| Vgs (Max) | ±20V [1] |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA [1] |
Specification references[1]Transphorm TP65H050G4WS vendor product record ↗