Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 2 A [1] |
| Base Product Number | TIP112 [1] |
| Current - Collector Cutoff (Max) | 2mA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A, 4V [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | 150°C(TJ) [1] |
| Power - Max | 2 W [1] |
| Product Status | Obsolete [1] |
| Transistor Type | NPN - Darlington [1] |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 8mA, 2A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 100 V [1] |
| Package / Case | TO-220-3 [1] |
Specification references[1]onsemi TIP112 vendor product record ↗
