STPSC4H065DLF representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image1 of 2
Exact MPN15 sourced attributes1 source document

STMicroelectronics · exact orderable part

STPSC4H065DLF

DIODE SIL CARB 650V 4A POWERFLAT

Diode Type
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
4A
Voltage - Forward (Vf) (Max) @ If
1.55 V @ 4 A
Reverse Recovery Time (trr)
0 ns
Speed
No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr
40 µA @ 650 V
Capacitance @ Vr, F
245pF @ 0V, 1MHz
Operating Temperature - Junction
-40°C~175°C
Original manufacturerCommercial terms confirmed per lot
ManufacturerSTMicroelectronics
Package / case8-PowerVDFN
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

STPSC4H065DLF technical parameters
ParameterValue
Base Product NumberSTPSC4 [1]
Capacitance @ Vr, F245pF @ 0V, 1MHz [1]
Current - Average Rectified (Io)4A [1]
Current - Reverse Leakage @ Vr40 µA @ 650 V [1]
Diode TypeSilicon Carbide Schottky [1]
MfrSTMicroelectronics [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction-40°C~175°C [1]
Product StatusActive [1]
Reverse Recovery Time (trr)0 ns [1]
SpeedNo Recovery Time > 500mA (Io) [1]
SeriesECOPACK®2 [1]
Voltage - DC Reverse (Vr) (Max)650 V [1]
Voltage - Forward (Vf) (Max) @ If1.55 V @ 4 A [1]
Package / Case8-PowerVDFN [1]

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