STPSC10H12B-TR1 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

STMicroelectronics · exact orderable part

STPSC10H12B-TR1

DIODE SIL CARBIDE 1.2KV 10A DPAK

Diode Type
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.5 V @ 10 A
Reverse Recovery Time (trr)
0 ns
Speed
No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr
60 µA @ 1200 V
Capacitance @ Vr, F
725pF @ 0V, 1MHz
Operating Temperature - Junction
-40°C~175°C
Original manufacturerCommercial terms confirmed per lot
ManufacturerSTMicroelectronics
Package / caseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

STPSC10H12B-TR1 technical parameters
ParameterValue
Base Product NumberSTPSC10 [1]
Capacitance @ Vr, F725pF @ 0V, 1MHz [1]
Current - Average Rectified (Io)10A [1]
Current - Reverse Leakage @ Vr60 µA @ 1200 V [1]
Diode TypeSilicon Carbide Schottky [1]
MfrSTMicroelectronics [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction-40°C~175°C [1]
Product StatusObsolete [1]
Reverse Recovery Time (trr)0 ns [1]
SpeedNo Recovery Time > 500mA (Io) [1]
SeriesECOPACK® [1]
Voltage - DC Reverse (Vr) (Max)1200 V [1]
Voltage - Forward (Vf) (Max) @ If1.5 V @ 10 A [1]
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63 [1]

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