RM80N150T2 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN16 sourced attributes2 source documents

Rectron USA · exact orderable part

RM80N150T2

MOSFET N-CH 150V 80A TO220-3

FET Type
N-Channel
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Rds On (Max) @ Id, Vgs
12.5mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Power Dissipation (Max)
210W (Tc)
Input Capacitance (Ciss) (Max) @ Vds
3200 pF @ 75 V
Original manufacturerCommercial terms confirmed per lot
ManufacturerRectron USA
Package / caseTO-220-3
Mounting typeThrough Hole
PackingTube

Technical parameters

Technical specifications

RM80N150T2 technical parameters
ParameterValue
Current - Continuous Drain (Id) @ 25°C80A (Tc) [2]
Drain to Source Voltage (Vdss)150 V [2]
Drive Voltage (Max Rds On, Min Rds On)10V [2]
FET TypeN-Channel [2]
Input Capacitance (Ciss) (Max) @ Vds3200 pF @ 75 V [2]
MfrRectron USA [2]
Mounting TypeThrough Hole [2]
RoHS (DigiKey record)ROHS3 Compliant [2]
Operating Temperature-55°C~175°C(TJ) [2]
Power Dissipation (Max)210W (Tc) [2]
Product StatusActive [2]
Rds On (Max) @ Id, Vgs12.5mOhm @ 40A, 10V [2]
TechnologyMOSFET (Metal Oxide) [2]
Vgs (Max)±20V [2]
Vgs(th) (Max) @ Id4.5V @ 250µA [2]
Package / CaseTO-220-3 [2]

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