Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) [1] |
| Drain to Source Voltage (Vdss) | 100 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V [1] |
| FET Type | N-Channel [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 5480 pF @ 50 V [1] |
| Mfr | Rectron USA [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C~175°C(TJ) [1] |
| Power Dissipation (Max) | 125W (Tc) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 40A, 10V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs (Max) | ±20V [1] |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA [1] |
Specification references[1]Rectron USA RM80N100T2 vendor product record ↗