RM50N150DF representative package visual — not an exact-product photograph
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Exact MPN15 sourced attributes1 source document

Rectron USA · exact orderable part

RM50N150DF

MOSFET N-CHANNEL 150V 50A 8DFN

FET Type
N-Channel
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Rds On (Max) @ Id, Vgs
19mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Power Dissipation (Max)
100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds
5200 pF @ 50 V
Original manufacturerCommercial terms confirmed per lot
ManufacturerRectron USA
Package / case8-PowerVDFN
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

RM50N150DF technical parameters
ParameterValue
Current - Continuous Drain (Id) @ 25°C50A (Tc) [1]
Drain to Source Voltage (Vdss)150 V [1]
Drive Voltage (Max Rds On, Min Rds On)10V [1]
FET TypeN-Channel [1]
Input Capacitance (Ciss) (Max) @ Vds5200 pF @ 50 V [1]
MfrRectron USA [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~175°C(TJ) [1]
Power Dissipation (Max)100W (Tc) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs19mOhm @ 30A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Vgs(th) (Max) @ Id4.5V @ 250µA [1]
Package / Case8-PowerVDFN [1]

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RM50N150DF Rectron USA Datasheet, Specs and RFQ | MPNHarbor