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Exact MPN14 sourced attributes1 source document

Rectron USA · exact orderable part

RM2A8N60S4

MOSFET N-CH 60V 2.8A SOT223-3

Current - Continuous Drain (Id) @ 25°C
2.8A (Ta)
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
715 pF @ 15 V
Mfr
Rectron USA
Original manufacturerCommercial terms confirmed per lot
ManufacturerRectron USA
Package / caseTO-261-4, TO-261AA
Mounting typeunknown
PackingTape & Reel (TR)

Technical parameters

Technical specifications

RM2A8N60S4 technical parameters
ParameterValue
Current - Continuous Drain (Id) @ 25°C2.8A (Ta) [1]
Drain to Source Voltage (Vdss)60 V [1]
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V [1]
FET TypeN-Channel [1]
Input Capacitance (Ciss) (Max) @ Vds715 pF @ 15 V [1]
MfrRectron USA [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)1.5W (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs100mOhm @ 2.5A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Vgs(th) (Max) @ Id2.5V @ 250µA [1]

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RM2A8N60S4 Rectron USA Datasheet, Specs and RFQ | MPNHarbor