RM17N800HD representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

Rectron USA · exact orderable part

RM17N800HD

MOSFET N-CH 800V 17A TO263-2

Current - Continuous Drain (Id) @ 25°C
17A (Ta)
Drain to Source Voltage (Vdss)
800 V
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
2060 pF @ 50 V
Mfr
Rectron USA
Original manufacturerCommercial terms confirmed per lot
ManufacturerRectron USA
Package / caseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting typeunknown
PackingTape & Reel (TR)

Technical parameters

Technical specifications

RM17N800HD technical parameters
ParameterValue
Current - Continuous Drain (Id) @ 25°C17A (Ta) [1]
Drain to Source Voltage (Vdss)800 V [1]
Drive Voltage (Max Rds On, Min Rds On)10V [1]
FET TypeN-Channel [1]
Input Capacitance (Ciss) (Max) @ Vds2060 pF @ 50 V [1]
MfrRectron USA [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)260W (Tc) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs320mOhm @ 8.5A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±30V [1]
Vgs(th) (Max) @ Id4V @ 250µA [1]

Catalog relationships

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