Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 100 mA [1] |
| Base Product Number | PN412 [1] |
| Current - Collector Cutoff (Max) | 25nA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 1V [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | 150°C(TJ) [1] |
| Power - Max | 625 mW [1] |
| Product Status | Obsolete [1] |
| Transistor Type | PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 40 V [1] |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) [1] |
Specification references[1]onsemi PN4122 vendor product record ↗
