Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | PN356 [2] |
| Current - Collector (Ic) (Max) | 50mA [2] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8mA, 10V [2] |
| Frequency - Transition | 1.5GHz [2] |
| Mfr | onsemi [2] |
| Gain | 14dB ~ 26dB [2] |
| Mounting Type | Through Hole [2] |
| Power - Max | 350mW [2] |
| Product Status | Obsolete [2] |
| Operating Temperature | -55°C ~ 150°C (TJ) [2] |
| Transistor Type | NPN [2] |
| Voltage - Collector Emitter Breakdown (Max) | 15V [2] |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) [2] |
Specification references[1]PN3563 delivered document ↗[2]onsemi PN3563 vendor product record ↗
