Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 200 mA [2] |
| Base Product Number | PN236 [2] |
| Current - Collector Cutoff (Max) | 400nA (ICBO) [2] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V [2] |
| Mfr | onsemi [2] |
| Mounting Type | Through Hole [2] |
| Operating Temperature | -55°C ~ 150°C (TJ) [2] |
| Power - Max | 350 mW [2] |
| Product Status | Obsolete [2] |
| Transistor Type | NPN [2] |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA [2] |
| Voltage - Collector Emitter Breakdown (Max) | 15 V [2] |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) [2] |
Specification references[1]PN2369 delivered document ↗[2]onsemi PN2369 vendor product record ↗
