Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Capacitance @ Vr, F | 1600pF @ 1V, 1MHz [1] |
| Current - Average Rectified (Io) | 20A [1] |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V [1] |
| Diode Type | Schottky [1] |
| Mfr | Nexperia USA Inc. [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature - Junction | 175°C [1] |
| Product Status | Obsolete [1] |
| Reverse Recovery Time (trr) | 55 ns [1] |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) [1] |
| Series | PMEG [1] |
| Voltage - DC Reverse (Vr) (Max) | 100 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 840 mV @ 20 A [1] |
| Package / Case | TO-277, 3-PowerDFN [1] |
Specification references[1]Nexperia USA Inc. PMEG100T200ELPE-QZ vendor product record ↗
