Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 1.5 A [1] |
| Base Product Number | NZT60 [1] |
| Current - Collector Cutoff (Max) | 10nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 5V [1] |
| Frequency - Transition | 150MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 1 W [1] |
| Product Status | Active [1] |
| Transistor Type | NPN - Darlington [1] |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 110 V [1] |
| Package / Case | TO-261-4, TO-261AA [1] |
Specification references[1]onsemi NZT605 vendor product record ↗
