Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | NRVBD660 [1] |
| Current - Average Rectified (Io) (per Diode) | 3A [1] |
| Current - Reverse Leakage @ Vr | 100 µA @ 60 V [1] |
| Grade | Automotive [1] |
| Diode Configuration | 1 Pair Common Cathode [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature - Junction | -65°C ~ 175°C [1] |
| Product Status | Obsolete [1] |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) [1] |
| Series | SWITCHMODE™ [1] |
| Qualification | AEC-Q101 [1] |
| Technology | Schottky [1] |
| Voltage - DC Reverse (Vr) (Max) | 60 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 700 mV @ 3 A [1] |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 [1] |
Specification references[1]onsemi NRVBD660CTG vendor product record ↗
