Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | NRVBB60 [1] |
| Current - Average Rectified (Io) (per Diode) | 30A [1] |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V [1] |
| Grade | Automotive [1] |
| Diode Configuration | 1 Pair Common Cathode [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature - Junction | 175°C (Max) [1] |
| Product Status | Active [1] |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) [1] |
| Qualification | AEC-Q101 [1] |
| Technology | Schottky [1] |
| Voltage - DC Reverse (Vr) (Max) | 100 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 840 mV @ 30 A [1] |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB [1] |
Specification references[1]onsemi NRVBB60H100CTT4G vendor product record ↗
