NDSH40120CDN representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

NDSH40120CDN

DIODE ARR SIC 1200V 20A TO247-3

Technology
SiC (Silicon Carbide) Schottky
Diode Configuration
1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io) (per Diode)
20A
Voltage - Forward (Vf) (Max) @ If
1.75 V @ 20 A
Current - Reverse Leakage @ Vr
200 µA @ 1200 V
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Operating Temperature - Junction
-55°C ~ 175°C
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-247-3
Mounting typeThrough Hole
PackingTube

Technical parameters

Technical specifications

NDSH40120CDN technical parameters
ParameterValue
Base Product NumberNDSH40120 [1]
Current - Average Rectified (Io) (per Diode)20A [1]
Current - Reverse Leakage @ Vr200 µA @ 1200 V [1]
Diode Configuration1 Pair Common Cathode [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature - Junction-55°C ~ 175°C [1]
Reverse Recovery Time (trr)0 ns [1]
Product StatusActive [1]
SpeedNo Recovery Time > 500mA (Io) [1]
TechnologySiC (Silicon Carbide) Schottky [1]
Voltage - DC Reverse (Vr) (Max)1200 V [1]
Voltage - Forward (Vf) (Max) @ If1.75 V @ 20 A [1]
Package / CaseTO-247-3 [1]

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