Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | NDSH40120 [1] |
| Current - Average Rectified (Io) (per Diode) | 20A [1] |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V [1] |
| Diode Configuration | 1 Pair Common Cathode [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature - Junction | -55°C ~ 175°C [1] |
| Reverse Recovery Time (trr) | 0 ns [1] |
| Product Status | Active [1] |
| Speed | No Recovery Time > 500mA (Io) [1] |
| Technology | SiC (Silicon Carbide) Schottky [1] |
| Voltage - DC Reverse (Vr) (Max) | 1200 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 20 A [1] |
| Package / Case | TO-247-3 [1] |
Specification references[1]onsemi NDSH40120CDN vendor product record ↗
