NDS9947 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

onsemi · exact orderable part

NDS9947

MOSFET 2P-CH 20V 3.5A 8SOIC

Configuration
2 P-Channel (Dual)
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
3.5A
Rds On (Max) @ Id, Vgs
100mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13nC @ 10V
Power - Max
900mW
Input Capacitance (Ciss) (Max) @ Vds
542pF @ 10V
FET Feature
Logic Level Gate
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / case8-SOIC (0.154", 3.90mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

NDS9947 technical parameters
ParameterValue
Base Product NumberNDS994 [1]
Configuration2 P-Channel (Dual) [1]
Current - Continuous Drain (Id) @ 25°C3.5A [1]
FET FeatureLogic Level Gate [1]
Drain to Source Voltage (Vdss)20V [1]
Input Capacitance (Ciss) (Max) @ Vds542pF @ 10V [1]
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max900mW [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs100mOhm @ 3.5A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id3V @ 250µA [1]
Package / Case8-SOIC (0.154", 3.90mm Width) [1]
SeriesPowerTrench® [1]

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