Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | NDS896 [1] |
| Current - Continuous Drain (Id) @ 25°C | 3.1A [1] |
| Drain to Source Voltage (Vdss) | 30V [1] |
| FET Feature | Logic Level Gate [1] |
| FET Type | 2 N-Channel (Dual) [1] |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 900mW [1] |
| Product Status | Obsolete [1] |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 3.1A, 10V [1] |
| Vgs(th) (Max) @ Id | 3V @ 250µA [1] |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) [1] |
Specification references[1]onsemi NDS8961 vendor product record ↗