Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | NDS895 [1] |
| Configuration | N and P-Channel [1] |
| Current - Continuous Drain (Id) @ 25°C | 5.3A, 4A [1] |
| FET Feature | Logic Level Gate [1] |
| Drain to Source Voltage (Vdss) | 30V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 15V [1] |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 900mW [1] |
| Product Status | Obsolete [1] |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.3A, 10V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA [1] |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) [1] |
Specification references[1]onsemi NDS8958 vendor product record ↗
