Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | NDS893 [1] |
| Current - Continuous Drain (Id) @ 25°C | 3.8A [1] |
| Drain to Source Voltage (Vdss) | 20V [1] |
| FET Feature | Logic Level Gate [1] |
| FET Type | 2 P-Channel (Dual) [1] |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 1120pF @ 10V [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 900mW [1] |
| Product Status | Obsolete [1] |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3.8A, 4.5V [1] |
| Vgs(th) (Max) @ Id | 1V @ 250µA [1] |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) [1] |
Specification references[1]onsemi NDS8934 vendor product record ↗