NDS8926 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

onsemi · exact orderable part

NDS8926

MOSFET 2N-CH 20V 5.5A 8SOIC

Configuration
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
5.5A
Rds On (Max) @ Id, Vgs
35mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30nC @ 4.5V
Power - Max
900mW
Input Capacitance (Ciss) (Max) @ Vds
760pF @ 10V
FET Feature
Logic Level Gate
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / case8-SOIC (0.154", 3.90mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT)

Technical parameters

Technical specifications

NDS8926 technical parameters
ParameterValue
Base Product NumberNDS892 [1]
Configuration2 N-Channel (Dual) [1]
Current - Continuous Drain (Id) @ 25°C5.5A [1]
FET FeatureLogic Level Gate [1]
Drain to Source Voltage (Vdss)20V [1]
Input Capacitance (Ciss) (Max) @ Vds760pF @ 10V [1]
Gate Charge (Qg) (Max) @ Vgs30nC @ 4.5V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Power - Max900mW [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs35mOhm @ 5.5A, 4.5V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id1V @ 250µA [1]
Package / Case8-SOIC (0.154", 3.90mm Width) [1]

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