NDM3000 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN16 sourced attributes1 source document

onsemi · exact orderable part

NDM3000

MOSFET 3N/3P-CH 30V 3A 16SOIC

Configuration
3 N and 3 P-Channel (3-Phase Bridge)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
3A
Rds On (Max) @ Id, Vgs
90mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Power - Max
1.4W
Input Capacitance (Ciss) (Max) @ Vds
375pF @ 10V, 360pF @ 10V
FET Feature
Logic Level Gate
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / case16-SOIC (0.154", 3.90mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

NDM3000 technical parameters
ParameterValue
Base Product NumberNDM300 [1]
Configuration3 N and 3 P-Channel (3-Phase Bridge) [1]
Current - Continuous Drain (Id) @ 25°C3A [1]
FET FeatureLogic Level Gate [1]
Drain to Source Voltage (Vdss)30V [1]
Input Capacitance (Ciss) (Max) @ Vds375pF @ 10V, 360pF @ 10V [1]
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max1.4W [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs90mOhm @ 3A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id3V @ 250µA [1]
Package / Case16-SOIC (0.154", 3.90mm Width) [1]

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