Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | MURH86 [1] |
| Current - Average Rectified (Io) (per Diode) | 4A [1] |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V [1] |
| Diode Configuration | 1 Pair Common Cathode [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature - Junction | -65°C ~ 175°C [1] |
| Reverse Recovery Time (trr) | 35 ns [1] |
| Product Status | Obsolete [1] |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) [1] |
| Series | MEGAHERTZ™ [1] |
| Technology | Standard [1] |
| Voltage - DC Reverse (Vr) (Max) | 600 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 2.8 V @ 4 A [1] |
| Package / Case | TO-220-3 [1] |
Specification references[1]onsemi MURH860CT vendor product record ↗
