Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Capacitance @ Vr, F | 120pF @ 0V, 1MHz [1] |
| Current - Average Rectified (Io) | 8A [1] |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V [1] |
| Diode Type | Standard [1] |
| Mfr | Yangjie Technology [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature - Junction | -55°C~150°C [1] |
| Product Status | Active [1] |
| Reverse Recovery Time (trr) | 40 ns [1] |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) [1] |
| Voltage - DC Reverse (Vr) (Max) | 200 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 8 A [1] |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB [1] |
Specification references[1]Yangjie Technology MURB820 vendor product record ↗
