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MQ1N5553US representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN13 sourced attributes1 source document

Microchip Technology · exact orderable part

MQ1N5553US

DIODE GP 800V 3A SQ-MELF B

Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
800 V
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
1.3 V @ 9 A
Reverse Recovery Time (trr)
2 µs
Speed
Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
1 µA @ 800 V
Operating Temperature - Junction
-65°C~175°C
Mounting Type
Surface Mount
Original manufacturerCommercial terms confirmed per lot
ManufacturerMicrochip Technology
Package / caseSQ-MELF, B
Mounting typeSurface Mount
PackingBulk

Technical parameters

Technical specifications

13 normalized values · 1 validated source

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ParameterValue
Current - Average Rectified (Io)3A [1]
Current - Reverse Leakage @ Vr1 µA @ 800 V [1]
Diode TypeStandard [1]
MfrMicrochip Technology [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction-65°C~175°C [1]
Product StatusActive [1]
Reverse Recovery Time (trr)2 µs [1]
SpeedStandard Recovery >500ns, > 200mA (Io) [1]
SeriesMilitary, MIL-PRF-19500/420 [1]
Voltage - DC Reverse (Vr) (Max)800 V [1]
Voltage - Forward (Vf) (Max) @ If1.3 V @ 9 A [1]
Package / CaseSQ-MELF, B [1]
Specification references[1]Microchip Technology MQ1N5553US vendor product record ↗

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ManufacturerMicrochip TechnologyView brand page →CategoryDiodes - Rectifiers - SingleView category page →

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