Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA [1] |
| Base Product Number | MPSW55 [1] |
| Current - Collector Cutoff (Max) | 500nA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 250mA, 1V [1] |
| Frequency - Transition | 50MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 1 W [1] |
| Product Status | Obsolete [1] |
| Transistor Type | PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 250mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 60 V [1] |
| Package / Case | TO-226-3, TO-92-3 Long Body [1] |
Specification references[1]onsemi MPSW55G vendor product record ↗
