MPSW06G representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

MPSW06G

TRANS NPN 80V 0.5A TO92

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
80 V
Current - Collector (Ic) (Max)
500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 250mA, 1V
Vce Saturation (Max) @ Ib, Ic
400mV @ 10mA, 250mA
Frequency - Transition
50MHz
Power - Max
1 W
Current - Collector Cutoff (Max)
500nA
Operating Temperature
-55°C~150°C(TJ)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-226-3, TO-92-3 Long Body
Mounting typeThrough Hole
PackingBulk

Technical parameters

Technical specifications

MPSW06G technical parameters
ParameterValue
Current - Collector (Ic) (Max)500 mA [1]
Base Product NumberMPSW06 [1]
Current - Collector Cutoff (Max)500nA [1]
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 250mA, 1V [1]
Frequency - Transition50MHz [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max1 W [1]
Product StatusObsolete [1]
Transistor TypeNPN [1]
Vce Saturation (Max) @ Ib, Ic400mV @ 10mA, 250mA [1]
Voltage - Collector Emitter Breakdown (Max)80 V [1]
Package / CaseTO-226-3, TO-92-3 Long Body [1]

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