Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 50 mA [1] |
| Base Product Number | MPS918 [1] |
| Current - Collector Cutoff (Max) | 50nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 3mA, 10V [1] |
| Frequency - Transition | 600MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 350 mW [1] |
| Product Status | Obsolete [1] |
| Transistor Type | NPN [1] |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 1mA, 10mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 15 V [1] |
| Package / Case | TO-226-3, TO-92-3 Long Body [1] |
Specification references[1]onsemi MPS918G vendor product record ↗
