MNS1N6640US/TR representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN13 sourced attributes1 source document

Microchip Technology · exact orderable part

MNS1N6640US/TR

DIODE GP REV 50V 300MA D-5D

Diode Type
Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)
50 V
Current - Average Rectified (Io)
300mA
Voltage - Forward (Vf) (Max) @ If
1 V @ 200 mA
Reverse Recovery Time (trr)
4 ns
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
100 nA @ 50 V
Operating Temperature - Junction
-65°C~175°C
Mounting Type
Surface Mount
Original manufacturerCommercial terms confirmed per lot
ManufacturerMicrochip Technology
Package / caseSQ-MELF, D
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

MNS1N6640US/TR technical parameters
ParameterValue
Current - Average Rectified (Io)300mA [1]
Current - Reverse Leakage @ Vr100 nA @ 50 V [1]
Diode TypeStandard, Reverse Polarity [1]
MfrMicrochip Technology [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction-65°C~175°C [1]
Product StatusActive [1]
Reverse Recovery Time (trr)4 ns [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
SeriesMilitary, MIL-PRF-19500/609 [1]
Voltage - DC Reverse (Vr) (Max)50 V [1]
Voltage - Forward (Vf) (Max) @ If1 V @ 200 mA [1]
Package / CaseSQ-MELF, D [1]

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