MNS1N6627US representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

Microchip Technology · exact orderable part

MNS1N6627US

DIODE GP 440V 1.75A SQ-MELF B

Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
440 V
Current - Average Rectified (Io)
1.75A
Voltage - Forward (Vf) (Max) @ If
1.35 V @ 2 A
Reverse Recovery Time (trr)
45 ns
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
2 µA @ 440 V
Capacitance @ Vr, F
40pF @ 10V, 1MHz
Operating Temperature - Junction
-65°C~150°C
Original manufacturerCommercial terms confirmed per lot
ManufacturerMicrochip Technology
Package / caseSQ-MELF, B
Mounting typeSurface Mount
PackingBulk

Technical parameters

Technical specifications

MNS1N6627US technical parameters
ParameterValue
Capacitance @ Vr, F40pF @ 10V, 1MHz [1]
Current - Average Rectified (Io)1.75A [1]
Current - Reverse Leakage @ Vr2 µA @ 440 V [1]
Diode TypeStandard [1]
MfrMicrochip Technology [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction-65°C~150°C [1]
Product StatusActive [1]
Reverse Recovery Time (trr)45 ns [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
SeriesMilitary, MIL-PRF-19500/590 [1]
Voltage - DC Reverse (Vr) (Max)440 V [1]
Voltage - Forward (Vf) (Max) @ If1.35 V @ 2 A [1]
Package / CaseSQ-MELF, B [1]

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