MNS1N5822US representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN12 sourced attributes1 source document

Microchip Technology · exact orderable part

MNS1N5822US

DIODE SCHOTTKY 40V 3A SQ-MELF B

Diode Type
Schottky
Voltage - DC Reverse (Vr) (Max)
40 V
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
500 mV @ 3 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
100 µA @ 40 V
Operating Temperature - Junction
-65°C~125°C
Mounting Type
Surface Mount
Mfr
Microchip Technology
Original manufacturerCommercial terms confirmed per lot
ManufacturerMicrochip Technology
Package / caseSQ-MELF, B
Mounting typeSurface Mount
PackingBulk

Technical parameters

Technical specifications

MNS1N5822US technical parameters
ParameterValue
Current - Average Rectified (Io)3A [1]
Current - Reverse Leakage @ Vr100 µA @ 40 V [1]
Diode TypeSchottky [1]
MfrMicrochip Technology [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction-65°C~125°C [1]
Product StatusActive [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
SeriesMilitary, MIL-PRF-19500/620 [1]
Voltage - DC Reverse (Vr) (Max)40 V [1]
Voltage - Forward (Vf) (Max) @ If500 mV @ 3 A [1]
Package / CaseSQ-MELF, B [1]

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