Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Average Rectified (Io) | 3A [1] |
| Current - Reverse Leakage @ Vr | 100 µA @ 40 V [1] |
| Diode Type | Schottky [1] |
| Mfr | Microchip Technology [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature - Junction | -65°C~125°C [1] |
| Product Status | Active [1] |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) [1] |
| Series | Military, MIL-PRF-19500/620 [1] |
| Voltage - DC Reverse (Vr) (Max) | 40 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 500 mV @ 3 A [1] |
| Package / Case | SQ-MELF, B [1] |
Specification references[1]Microchip Technology MNS1N5822US vendor product record ↗
