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Exact MPN14 sourced attributes1 source document

Microchip Technology · exact orderable part

MNS1N5806US/TR

DIODE GP REV 160V 1A A SQ-MELF

Diode Type
Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)
160 V
Current - Average Rectified (Io)
1A
Voltage - Forward (Vf) (Max) @ If
875 mV @ 1 A
Reverse Recovery Time (trr)
25 ns
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
1 µA @ 150 V
Capacitance @ Vr, F
25pF @ 10V, 1MHz
Operating Temperature - Junction
-65°C~175°C
Original manufacturerCommercial terms confirmed per lot
ManufacturerMicrochip Technology
Package / caseSQ-MELF, A
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

MNS1N5806US/TR technical parameters
ParameterValue
Capacitance @ Vr, F25pF @ 10V, 1MHz [1]
Current - Average Rectified (Io)1A [1]
Current - Reverse Leakage @ Vr1 µA @ 150 V [1]
Diode TypeStandard, Reverse Polarity [1]
MfrMicrochip Technology [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction-65°C~175°C [1]
Product StatusActive [1]
Reverse Recovery Time (trr)25 ns [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
SeriesMIL-PRF-19500/477 [1]
Voltage - DC Reverse (Vr) (Max)160 V [1]
Voltage - Forward (Vf) (Max) @ If875 mV @ 1 A [1]
Package / CaseSQ-MELF, A [1]

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