Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | MMDT2907 [1] |
| Current - Collector (Ic) (Max) | 600mA [1] |
| Current - Collector Cutoff (Max) | 10nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V [1] |
| Frequency - Transition | 200MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 200mW [1] |
| Product Status | Obsolete [1] |
| Transistor Type | 2 PNP (Dual) [1] |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 60V [1] |
| Package / Case | 6-TSSOP, SC-88, SOT-363 [1] |
Specification references[1]Diodes Incorporated MMDT2907A-7 vendor product record ↗
