Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 600 mA [1] |
| Current - Collector Cutoff (Max) | 100nA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 225 mW [1] |
| Product Status | Active [1] |
| Transistor Type | NPN [1] |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 160 V [1] |
Specification references[1]onsemi MMBT5551LT1H vendor product record ↗