MMBT5551LT1H representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN12 sourced attributes1 source document

onsemi · exact orderable part

MMBT5551LT1H

SS SOT23 HV XSTR NPN 160V

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
160 V
Current - Collector (Ic) (Max)
600 mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Power - Max
225 mW
Current - Collector Cutoff (Max)
100nA
Operating Temperature
-55°C ~ 150°C (TJ)
Product Status
Active
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-236-3, SC-59, SOT-23-3
Mounting typeSurface Mount
PackingBulk

Technical parameters

Technical specifications

MMBT5551LT1H technical parameters
ParameterValue
Current - Collector (Ic) (Max)600 mA [1]
Current - Collector Cutoff (Max)100nA [1]
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max225 mW [1]
Product StatusActive [1]
Transistor TypeNPN [1]
Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA [1]
Voltage - Collector Emitter Breakdown (Max)160 V [1]
Package / CaseTO-236-3, SC-59, SOT-23-3 [1]

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