MJD50TF representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image1 of 2
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

MJD50TF

TRANS NPN 400V 1A DPAK

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
400 V
Current - Collector (Ic) (Max)
1 A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 300mA, 10V
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 1A
Frequency - Transition
10MHz
Power - Max
1.56 W
Current - Collector Cutoff (Max)
200µA
Operating Temperature
150°C (TJ)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT) Digi-Reel®

Technical parameters

Technical specifications

MJD50TF technical parameters
ParameterValue
Current - Collector (Ic) (Max)1 A [1]
Base Product NumberMJD50 [1]
Current - Collector Cutoff (Max)200µA [1]
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 300mA, 10V [1]
Frequency - Transition10MHz [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature150°C (TJ) [1]
Power - Max1.56 W [1]
Product StatusActive [1]
Transistor TypeNPN [1]
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 1A [1]
Voltage - Collector Emitter Breakdown (Max)400 V [1]
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63 [1]

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